Solid-State Infrared-Wavelength Converter Employing High-Quantum-Efficiency Ge-GaAs Heterojunction
- 15 March 1967
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (4) , 1718-1720
- https://doi.org/10.1063/1.1709748
Abstract
An n‐p‐n heterojunction structure, formed by the epitaxial growth of n‐Ge on a p‐GaAs substrate having a diffused n‐GaAs region on the opposite face, has been employed to convert 1.5‐μ radiation incident on the n‐Ge face to 0.9‐μ radiation emitted from the n‐GaAs face. The internal quantum efficiency of the n‐Ge, p‐GaAs heterojunction is 0.62; the spectral response of the heterojunction is typical of photon effects in Ge. The internal wavelength conversion efficiency is 2.8×10−5, limited principally by the low electroluminescent quantum efficiency of the GaAs p‐n junction at low injection current densities.This publication has 7 references indexed in Scilit:
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