Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode

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Abstract
This letter presents the recent developments of large-area focal plane “pseudo” arrays for infrared (IR) imaging. The devices are based on the epitaxial integration of an n-type mid-IR (8–10 μm) GaAs/AlGaAs quantum-well detector with a light-emitting diode. The increase of spontaneous emission by the midinfrared-induced photocurrent is detected with a charge-coupled device camera in the reflection configuration. The mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion.