Differential absorption spectroscopy of charge distributions in double-barrier tunnel structures

Abstract
Differential absorption spectroscopy is used to determine the charge density in Inx Ga1xAs/Inx Al1xAs double-barrier tunneling structures. We show the formation of accumulation and depletion regions on either side of the double barrier, and measure with an absolute calibration the accumulated charge in the 45-Å quantum-well region of the structures. Peak charge densities ≊5.4×1010 cm1 and ≊3.9×1010 cm2 are measured for barrier thicknesses of 70 and 56 Å, respectively. The corresponding calculated transit times are 70 and 20 ps.