Reduced oxide charge trapping and improved hot-electron reliability in submicrometer MOS devices fabricated by titanium salicide process
- 1 May 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (5) , 244-246
- https://doi.org/10.1109/55.704
Abstract
The effects of the titanium salicide (self-aligned silicide) process on the reliability of very-thin-gate-oxide MOSFETs have been studied. It is shown that the titanium salicide process, as compared to the conventional poly-Si gate process, has reduced electron and hole trapping in the oxide and improved hot-electron reliability. It is shown that these phenomena are related to the reduced hydrogen content in the oxide as revealed by a secondary ion mass spectrometry (SIMS) analysis.Keywords
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