Hooge parameters for various FET structures
- 1 March 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (3) , 662-666
- https://doi.org/10.1109/t-ed.1985.21995
Abstract
We present here values for the Hooge parameters αHof various FET structures that are one or more orders of magnitude smaller than the value 2 × 10-3that was first proposed. It cannot be said for certain which of these values are due to mobility-fluctuation noise and which represent number-fluctuation noise, but it seems reasonable to assume that the lowest values of αHare more likely due to mobility fluctuations.Keywords
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