Time-resolved optical measurements of laser melting and rapid solidification on GeAl films
- 1 December 1989
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 43 (1-4) , 171-177
- https://doi.org/10.1016/0169-4332(89)90207-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Metastable phase formation with dendrite growth during laser-induced rapid solidification of Al59Ge41 sputtered thin filmsJournal of the Less Common Metals, 1988
- Melting threshold of crystalline and amorphized Si irradiated with a pulsed ArF (193 nm) excimer laserApplied Physics A, 1988
- Explosive crystallization in amorphous Si initiated by long pulse width laser irradiationApplied Physics Letters, 1988
- Phase-change optical data storage in GaSbApplied Optics, 1987
- Laser-induced crystallization of amorphous GeTe: A time-resolved studyPhysical Review B, 1987
- Laser microfabrication of thin films: Part threeOptics & Laser Technology, 1987
- Between explosive crystallization and amorphous regrowth: Inhomogeneous solidification upon pulsed-laser annealing of amorphous siliconApplied Physics Letters, 1987
- Constitution of an Al-37.5Ge splat quenched foil: Implications on nucleation kineticsScripta Metallurgica, 1986