Prospects of gigascale integration (GSI) beyond 2003
- 1 January 1993
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. sc 14, 124-125
- https://doi.org/10.1109/isscc.1993.280057
Abstract
The authors suggest that beyond 2003, further opportunities for GSI will be governed by a hierarchy of theoretical and practical limits whose levels can be codified as: (1) fundamental, (2) material, (3) device, (4) circuit, and (5) system. Theoretical limits are elucidated by plotting the average power dissipation during a binary switching transition of a logic gate P versus the corresponding gate delay time t/sub d/ and the reciprocal length squared of an interconnect versus the response time of the interconnect circuit. Using both the hierarchy of theoretical limits and the history of practical limits as guides, a one-billion-transistor chip is again projected by the year 2000 and the possibility of a one-trillion-transistor chip by the year 2020 is suggested.Keywords
This publication has 10 references indexed in Scilit:
- Comparative performance limits of MOSFET, MESFET and MODFET digital circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- An analytical threshold voltage and subthreshold current model for short-channel MESFETsIEEE Journal of Solid-State Circuits, 1993
- Scaling the Si MOSFET: from bulk to SOI to bulkIEEE Transactions on Electron Devices, 1992
- Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transportIEEE Transactions on Electron Devices, 1991
- MOSFET scaling limits determined by subthreshold conductionIEEE Transactions on Electron Devices, 1989
- Optimal interconnection circuits for VLSIIEEE Transactions on Electron Devices, 1985
- Theoretical, practical and analogical limits in ULSIPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983
- The evolution of digital electronics towards VLSIIEEE Journal of Solid-State Circuits, 1979
- Physical limits in digital electronicsProceedings of the IEEE, 1975
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972