An analytical threshold voltage and subthreshold current model for short-channel MESFETs
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 28 (2) , 169-172
- https://doi.org/10.1109/4.192050
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- An analytical two-dimensional model for silicon MESFETsIEEE Transactions on Electron Devices, 1988
- Improved short-channel GaAs MESFET's by use of higher doping concentrationIEEE Transactions on Electron Devices, 1984
- Short-channel MOST threshold voltage modelIEEE Journal of Solid-State Circuits, 1982
- Generalized guide for MOSFET miniaturizationIEEE Electron Device Letters, 1980
- A device model for an ion-implanted MESFETIEEE Transactions on Electron Devices, 1979