Three-region analytical models for MESFETs in low-voltage digital circuits
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (6) , 850-858
- https://doi.org/10.1109/4.78274
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- An analytical two-dimensional model for silicon MESFETsIEEE Transactions on Electron Devices, 1988
- A sub- and near-threshold current model for silicon MESFETsIEEE Transactions on Electron Devices, 1988
- Subthreshold current ion GaAs MESFETsIEEE Electron Device Letters, 1988
- A subthreshold current model for GaAs MESFET'sIEEE Electron Device Letters, 1987
- GaAs Devices and CircuitsPublished by Springer Nature ,1987
- A comparison of semiconductor devices for high-speed logicProceedings of the IEEE, 1982
- An accurate JFET/MESFET model for circuit analysisSolid-State Electronics, 1982
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975
- Ion-implanted complementary MOS transistors in low-voltage circuitsIEEE Journal of Solid-State Circuits, 1972
- Field-dependent mobility analysis of the field-effect transistorProceedings of the IEEE, 1965