Temperature dependence of the cyclotron resonance in electron inversion layers on Si
- 1 August 1976
- journal article
- Published by Elsevier in Surface Science
- Vol. 58 (1) , 199-201
- https://doi.org/10.1016/0039-6028(76)90136-9
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Electron mobility in a semiconductor inversion layer: Possible contribution from bulk phononsSurface Science, 1971
- Electrons and “SURFONS” in a semiconductor inversion layerSurface Science, 1971