Galvanomagnetic effects in n-type gallium antimonide
- 1 January 1978
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 39 (4) , 403-411
- https://doi.org/10.1016/0022-3697(78)90082-3
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Residual acceptors in natural GaSb and Gaxln1−xSb; their contribution to transport between 4.7 and 300 °KJournal of Applied Physics, 1973
- Temperature and pressure dependence of the Γ1celectron mobility in GaSbJournal of Physics C: Solid State Physics, 1973
- Conduction Band Parameters in GaSb from High-Temperature Transport MeasurementsCanadian Journal of Physics, 1972
- Study of the (111) Conduction Band of GaSbPhysica Status Solidi (b), 1970
- Experimental Study of the Conduction Band of GaSbPhysica Status Solidi (b), 1969
- Temperature Dependence of Carrier Concentrations and Conduction-Band Minima Separation of Gallium AntimonideJournal of Applied Physics, 1968
- High-Field Transport in- Type GaAsPhysical Review B, 1968
- Electron Mobility in GaSb at 77°KPhysical Review B, 1967
- Conduction electron scattering by ionized donors in InSb at 80°KJournal of Physics and Chemistry of Solids, 1965
- An investigation into the apparent purity limit in GaSbJournal of Physics and Chemistry of Solids, 1964