GaInAsSb/AlGaAsSb multiple-quantum-well diode lasers grown by organometallic vapor phase epitaxy

A GaInAsSb/AlGaAsSb multiple-quantum-well diode laser structure consisting of Al${}_{\text{0.6}}$ Ga${}_{\text{0.4}}$ As${}_{\text{0.05}}$ Sb${}_{\text{0.95}}$ cladding layers, Al${}_{\text{0.3}}$ Ga${}_{\text{0.7}}$ As${}_{\text{0.02}}$ Sb${}_{\text{0.98}}$ confining layers, and four 15-nm-thick Ga${}_{\text{0.87}}$ In${}_{\text{0.13}}$ As${}_{\text{0.12}}$ Sb${}_{\text{0.88}}$ quantum wells with 20-nm-thick Al${}_{\text{0.3}}$ Ga${}_{\text{0.7}}$ As${}_{\text{0.02}}$ Sb${}_{\text{0.98}}$ barrier layers was grown by organometallic vapor phase epitaxy. These lasers, emitting at 2.1 $\mu$ m, have exhibited pulsed threshold current densities as low as 1.2 kA/cm${}^2$ .