Scanning tunneling microscopy and spectroscopy of iron suicide epitaxially grown on Si(111)
- 1 May 1993
- journal article
- Published by Elsevier in Surface Science
- Vol. 286 (3) , 203-211
- https://doi.org/10.1016/0039-6028(93)90406-a
Abstract
No abstract availableThis publication has 24 references indexed in Scilit:
- In situ and ex situ structural characterization of β-FeSi2 films epitaxially grown on Si(111)Journal of Applied Physics, 1992
- Solid phase epitaxy and characterization of FeSi2 layers on Si(111)Applied Surface Science, 1992
- Epitaxial growth of β-FeSi2 on silicon (111): a real-time RHEED analysisApplied Surface Science, 1992
- Semiconducting silicide-silicon heterostructures: growth, properties and applicationsApplied Surface Science, 1992
- Electronic and vibrational properties of semiconducting crystalline FeSi2 layers grown on Si(111)Journal of Vacuum Science & Technology A, 1991
- Electronic structure of β-Physical Review B, 1990
- Electronic properties of semiconducting FeSi2 filmsJournal of Applied Physics, 1990
- Heteroepitaxy of metallic and semiconducting silicides on siliconApplied Surface Science, 1990
- A clarification of the index of refraction of beta-iron disilicideJournal of Applied Physics, 1988
- Optical properties of semiconducting iron disilicide thin filmsJournal of Applied Physics, 1985