High-efficiency GaAs0.7P0.3 solar cell on a transparent GaP wafer
- 15 March 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 57 (6) , 2302-2304
- https://doi.org/10.1063/1.334329
Abstract
The fabrication of a high performance GaAs0.7P0.3 solar cell on a transparent GaP substrate with an AM1.5 efficiency of 15.4% for a concentration ratio of 30× is reported for the first time. The measured transparency of the GaP substrate allows these cells to be mechanically stacked on silicon solar cells in a manner that should yield combined conversion efficiencies well over 25%. This mechanically stacked two‐band‐gap cell design is particularly attractive because it utilizes the already well‐developed Si solar cell and because the materials foundation for the GaAs0.7P0.3 on GaP cell has been laid by work on light emitting diodes.This publication has 2 references indexed in Scilit:
- Epitaxial films grown by vacuum MOCVDJournal of Crystal Growth, 1984
- A new low temperature III–V multilayer growth technique: Vacuum metalorganic chemical vapor depositionJournal of Applied Physics, 1981