Epitaxial films grown by vacuum MOCVD
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1) , 490-496
- https://doi.org/10.1016/0022-0248(84)90455-x
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Effect of Operating Pressure on the Properties of GaAs Grown by Low-Pressure MOCVDJapanese Journal of Applied Physics, 1983
- The growth of Magnesium-doped GaAs by the Om-Vpe processJournal of Electronic Materials, 1983
- Magnesium- and calcium-doping behavior in molecular-beam epitaxial III-V compoundsJournal of Applied Physics, 1982
- Metalorganic CVD of GaAs in a molecular beam systemJournal of Crystal Growth, 1981
- Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981
- Spreading Resistance Measurements on Gallium ArsenideJournal of the Electrochemical Society, 1978
- GaAs, GaP, and GaAs1−xPx films deposited by molecular beam epitaxyPhysica Status Solidi (a), 1975
- Heteroepitaxial GaAs on Aluminum OxideJournal of the Electrochemical Society, 1972
- Heteroepitaxial GaAs on Aluminum Oxide: Electrical Properties of Undoped FilmsJournal of Applied Physics, 1971
- Kinetics of the intramolecular four-center elimination of isobutylene from triisobutylaluminum in the gas phaseJournal of the American Chemical Society, 1969