Deposition of Amorphous Se[sub x]Te[sub 1−x] Thin Film Alloys by a Novel Photochemical Deposition Technique and Their Analysis
- 1 January 2002
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 149 (9) , C464-C468
- https://doi.org/10.1149/1.1499966
Abstract
Amorphous SexTe1−xSexTe1−x (x=0.63(x=0.63 to 0.96) thin-film alloys have been deposited by a recently established, novel photochemical deposition technique. The deposited films were analyzed for various properties by X-ray diffraction (XRD), Raman spectroscopy, Auger electron spectroscopic (AES) analysis, optical studies, etc. The XRD results indicated the amorphous nature of the deposited films. The Raman spectrum exhibited the presence of optical phonon peaks corresponding to the vibration of Se-Se, Te-Te, and the Se-Te bonds. The AES study confirmed the presence of the main constituent elements. The energy bandgap (Eg)(Eg) of the deposited films was determined from the optical study. The composition of the deposited films was deduced by means of energy bandgap values. The surface morphology of the films was analyzed by scanning electron microscopy. © 2002 The Electrochemical Society. All rights reserved.Keywords
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