Electron microscopic investigations of the recombination activity of dislocations in silicon
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (2) , 133-136
- https://doi.org/10.1002/crat.19810160203
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- On the EBIC contrast of dislocationsCrystal Research and Technology, 1981
- On the interaction between crystal defects and impurities in silicon investigated by electron microscopic methodsPhysica Status Solidi (a), 1980
- The electrical recombination efficiency of individual edge dislocations and stacking fault defects in n-type siliconPhysica Status Solidi (a), 1979
- Combined scanning (EBIC) and transmission electron microscopic investigations of dislocations in semiconductorsPhysica Status Solidi (a), 1979
- OBSERVATION OF INDIVIDUAL MISFIT DISLOCATIONS BY HIGH-VOLTAGE ELECTRON MICROSCOPYLe Journal de Physique Colloques, 1979
- A direct comparison between sem (ebic) and hvem images of crystal defects in semiconductorsUltramicroscopy, 1977
- Electrical Activity of Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1977
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971