RADIATIVE RECOMBINATION LIFETIMES IN LASER-EXCITED SILICON
- 15 February 1966
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 8 (4) , 99-101
- https://doi.org/10.1063/1.1754506
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Field Control of the Quantum Efficiency of Radiative Recombination in SemiconductorsPhysical Review B, 1965
- Light emission and electrical characteristics of epitaxial GaAs lasers and tunnel diodesSolid State Communications, 1964
- IRE Standards on Solid-State Devices: Measurement of Minority-Carrier Lifetime in Germanium and Silicon by the Method of Photoconductive DecayProceedings of the IRE, 1961