InyGa1−yAs/InyAl1−yAs resonant tunneling diodes on GaAs
- 1 July 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (1) , 111-113
- https://doi.org/10.1063/1.105562
Abstract
Resonant tunneling diodes are fabricated using InyGa1−yAs/InyAl1−yAs on GaAs substrates for the first time. The devices showed increasing peak current density as the In content was raised from 0 to 0.3, which is shown to be consistent with the Γ valley being the predominant transport mechanism at the tunneling resonance. Devices with y=0.2 showed an average peak to valley current ratio of 4.2 at room temperature, versus 3.3 for y=0. The decrease in the peak to valley current ratio is attributed to a decreased tunneling component in the X valleys of the In0.2Al0.8As barrier layers. Devices with y=0.3 show room‐temperature peak to valley current ratios of approximately 2.5; the increased valley current is attributed to interface roughness scattering and other effects.Keywords
This publication has 16 references indexed in Scilit:
- The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105 A cm−2Journal of Applied Physics, 1991
- Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak-to-valley ratios at room temperatureApplied Physics Letters, 1990
- Oscillations up to 420 GHz in GaAs/AlAs resonant tunneling diodesApplied Physics Letters, 1989
- Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logicIEEE Transactions on Electron Devices, 1989
- The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme on n-GaAsJournal of Applied Physics, 1989
- Inelastic tunneling in AlAs-GaAs-AlAs heterostructuresApplied Physics Letters, 1988
- Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structuresApplied Physics Letters, 1987
- Conduction Band Edge Discontinuity of In0.52Ga0.48As/In0.52(Ga1-xAlx)0.48As(0≦x≦1) HeterostructuresJapanese Journal of Applied Physics, 1986
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Complex band structure and superlattice electronic statesPhysical Review B, 1981