The design of GaAs/AlAs resonant tunneling diodes with peak current densities over 2×105 A cm−2
- 1 March 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (5) , 3345-3350
- https://doi.org/10.1063/1.348563
Abstract
A coherent transport model is described which accommodates bandstructure nonparabolicity by using a ‘‘local energy parabolic band approximation.’’ The model and a knowledge of its limitations is used to design resonant tunneling diodes in the GaAs/AlAs material system with measured peak current densities of 2.5(2.8)×105 A cm−2 concurrent with peak‐to‐valley ratios as high as 1.8 (3.1) at room temperature (77 K).This publication has 20 references indexed in Scilit:
- New negative differential resistance device based on resonant interband tunnelingApplied Physics Letters, 1989
- Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperatureApplied Physics Letters, 1988
- Fundamental oscillations up to 200 GHz in resonant tunneling diodes and new estimates of their maximum oscillation frequency from stationary-state tunneling theoryJournal of Applied Physics, 1988
- Elastic scattering centers in resonant tunneling diodesApplied Physics Letters, 1988
- Three-dimensional integration of resonant tunneling structures for signal processing and three-state logicApplied Physics Letters, 1988
- A Pseudomorphic In0.53Ga0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room TemperatureJapanese Journal of Applied Physics, 1987
- AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratioApplied Physics Letters, 1987
- Numerical analysis of heterostructure semiconductor devicesIEEE Transactions on Electron Devices, 1983
- Complex band structure and superlattice electronic statesPhysical Review B, 1981
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974