Epitaxial MgO buffer layers for YBa2Cu3O7−x thin film on GaAs
- 6 April 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (14) , 1753-1755
- https://doi.org/10.1063/1.107207
Abstract
Epitaxial MgO thin films have been grown on GaAs using electron beam (e‐beam) evaporation. X‐ray diffraction indicates that the epitaxial relations are MgO[001]//GaAs[001] and MgO[110]//GaAs[110]. The rocking curve widths are less than 1.5°. The refractive index is 1.73 and the dielectric strength is in excess of 4×106 V/cm. The MgO epitaxial films were used as a buffer layer for the growth of in situ YBa2Cu3O7−x on GaAs. The room‐temperature resistivity of this film is 450–530 μΩ cm and Tc (R=0) is 85–87 K. The critical current density at 77 K is 4–6.7×104 and 1–3.8×106 A/cm2 at 4.2 K, in zero applied field.Keywords
This publication has 7 references indexed in Scilit:
- Epitaxial growth of MgO on GaAs(001) for growing epitaxial BaTiO3 thin films by pulsed laser depositionApplied Physics Letters, 1992
- In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlatticesJournal of Applied Physics, 1991
- Role of buffer layers for superconducting YBa2Cu3O7−x thin films on GaAs substratesApplied Physics Letters, 1991
- In situ single-chamber laser processing of YBa2Cu3O7−δ superconducting thin films on yttria-stabilized zirconia buffered (100)GaAsApplied Physics Letters, 1991
- Characteristics of Y-Ba-Cu-O superconductor films on GaAs with an Al2O3 or AlGaO3 buffer layerApplied Physics Letters, 1991
- Superconducting YBa2Cu3O7−δ thin films on GaAs with conducting indium-tin-oxide buffer layersApplied Physics Letters, 1990
- Low-temperature deposition of Y-Ba-Cu-O films on a CaF2/GaAs substrateApplied Physics Letters, 1989