Near equilibrium growth of silicon by CVD I. The Si-Cl-H system
- 2 December 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 65 (1-3) , 399-405
- https://doi.org/10.1016/0022-0248(83)90080-5
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- EpitaxyReports on Progress in Physics, 1982
- The Nucleation of CVD Silicon on SiO[sub 2] and Si[sub 3]N[sub 4] SubstratesJournal of the Electrochemical Society, 1980
- Local selective homoepitaxy of silicon at reduced temperatures using a silicon-iodine transport systemJournal of Crystal Growth, 1978
- Influence of crystal structure on the luminescence of ions with s2 configurationJournal of Solid State Chemistry, 1977
- The growth and structure of semiconducting thin filmsReports on Progress in Physics, 1974
- The Equilibrium Behavior of the Silicon-Hydrogen-Bromine and Silicon-Hydrogen-Iodine SystemsJournal of the Electrochemical Society, 1973
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972
- Epitaxial Growth of Doped Silicon Using an Iodine CycleJournal of the Electrochemical Society, 1971
- Low-Temperature Epitaxial Growth of Si (Inverted Transport in Close-Spaced Technique)Journal of the Electrochemical Society, 1965
- Kinetics of Epitaxial Silicon Deposition by a Low Pressure Iodide ProcessJournal of the Electrochemical Society, 1965