Fabrication of epitaxial CoSi2 nanowires
- 6 August 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (6) , 824-826
- https://doi.org/10.1063/1.1390318
Abstract
We have developed a method for fabricating epitaxial CoSi2 nanowires using only conventional optical lithography and standard silicon processing steps. This method was successfully applied to ultrathin epitaxial CoSi2 layers grown on Si(100) and silicon-on-insulator substrates. A nitride mask induces a stress field near its edges into the CoSi2/Si heterostructure and leads to the separation of the CoSi2 layer in this region during a rapid thermal oxidation step. A subsequent etching step and a second oxidation generate highly homogenous silicide wires with dimensions down to 50 nm. (C) 2001 American Institute of PhysicsKeywords
This publication has 7 references indexed in Scilit:
- Lithographie der nächsten Generation: Angesichts milliardenschwerer Entwicklungskosten muss die Industrie zwischen vier lithographischen Verfahren auswählenPhysikalische Blätter, 2000
- Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistorsApplied Physics Letters, 1999
- Submicrometer patterning of cobaltdisilicide layers by local oxidationMicroelectronic Engineering, 1997
- Metal silicide patterning: a new approach to silicon nanoelectronicsNanotechnology, 1996
- Oxide mediated epitaxy of CoSi2 on siliconApplied Physics Letters, 1996
- New method for epitaxial heterostructure layer growthApplied Physics Letters, 1992
- Growth of epitaxial CoSi2 on (100)SiApplied Physics Letters, 1991