Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal–oxide–semiconductor field effect transistors
- 18 January 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 74 (3) , 454-456
- https://doi.org/10.1063/1.123059
Abstract
A nanometer patterning method, based on local oxidation of silicide layers, was used to pattern epitaxial CoSi2 layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi2 layers on Si(100) after patterning by local rapid thermal oxidation in dry oxygen. A Schottky source/drain metal–oxide–semiconductor field effect transistor with epitaxial CoSi2 on p-Si(100) was fabricated using this nanopatterning method to make the 100 nm gate. The device shows good I–V characteristics at 300 K.Keywords
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