Characterization of Te-doped GaSb grown by molecular beam epitaxy using SnTe

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Abstract
The use of SnTe as a source of donor impurities in the growth of n‐type GaSb by molecular beam epitaxy (MBE) is investigated. Hall carrier concentrations between 1.23×1016 and 3.7×1018 cm−3 have been obtained with room‐temperature Hall mobility as high as 5114 cm2/V s for a lightly doped GaSb layer with nH = 3.8 × 1016 cm−3. The temperature‐dependent Hall concentrations have been analyzed according to the two‐band model to obtain information about the effect of the band structure of GaSb on the electrical properties. In addition, the effects of V‐III flux ratio on Te incorporation in GaSb are studied. The measured carrier concentrations are found to be insensitive to the antimony‐to‐gallium beam equivalent pressures (from 1.5 to 9) at a growth temperature of 500 °C. These results may lead to SnTe being one of the donor dopants of choice in the MBE growth of n‐type GaSb.