Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films
- 23 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (8) , 1116-1118
- https://doi.org/10.1063/1.124614
Abstract
[[abstract]]The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1 – x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x14%. The results show the important role of Gd2O3 in the (Ga2O3)1 – x(Gd2O3)x dielectric films for effective passivation of GaAs. ©1999 American Institute of Physics.[[fileno]]2010113010148[[department]]物理Keywords
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