A 5 V-only 16 Mb flash memory with sector-erase mode
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A 5-V-only 16-Mb CMOS flash memory with sector erase mode which uses 0.6- mu m double-layer metal CMOS technology is described. The optimized memory cell and channel erase are keys to 5-V-only operation. With this erase method, positive pulses are applied to the channel area and negative high-voltage pulses are applied to a control gate using row decoders, realizing a 512-word sector erase.<>Keywords
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