High-quality GaN films obtained by air-bridged lateral epitaxial growth
- 31 December 2000
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 221 (1-4) , 338-344
- https://doi.org/10.1016/s0022-0248(00)00710-7
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrateApplied Physics Letters, 1999
- High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layersApplied Physics Letters, 1999
- Pendeoepitaxy of gallium nitride thin filmsApplied Physics Letters, 1999
- X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth TechniqueJapanese Journal of Applied Physics, 1999
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1999
- Microstructure of GaN laterally overgrown by metalorganic chemical vapor depositionApplied Physics Letters, 1998
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphireApplied Physics Letters, 1995