Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- 1 April 1999
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 38 (4A) , L356-359
- https://doi.org/10.1143/jjap.38.l356
Abstract
The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hydride vapor phase epitaxy (HVPE) and a buried structure of the W mask with a smooth surface is achieved for the stripe mask patterns of and direction. Optical and crystalline characteristics of the ELO-GaN are investigated by means of cathodoluminescence (CL) imaging and X-ray rocking curves (XRCs). It is found that the CL intensity at 133 K due to the near-band edge emission is stronger in the laterally overgrown region in comparison with that in the normal growth region. The φ-ω scan of XRCs reveals that the tilting of the c-axis is much smaller in the ELO-GaN grown with the W mask than that grown with an SiO2 mask.Keywords
This publication has 11 references indexed in Scilit:
- Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowthApplied Physics Letters, 1998
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1998
- Optical characterization of lateral epitaxial overgrown GaN layersApplied Physics Letters, 1998
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Crystal orientation dependence of impurity dopant incorporation in MOVPE-grown III–V materialsJournal of Crystal Growth, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Epitaxial Lateral Overgrowth of GaAs by LPEJapanese Journal of Applied Physics, 1988
- Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field-effect transistorsJournal of Applied Physics, 1984