Materials integration of gallium arsenide and silicon by wafer bonding
- 15 June 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (24) , 3181-3183
- https://doi.org/10.1063/1.121586
Abstract
We present a technique for the fabrication of materials integration of (100) silicon and (100) gallium arsenide by direct wafer bonding. GaAs wafers 3 in. in diameter were hydrophobically bonded to commercially available 3 in. silicon-on-sapphire wafers at room temperature. After successive annealings in hydrogen and arsenic atmospheres at temperatures up to 850 °C the Si/GaAs interfacial energy was increased by the formation of strong covalent bonds. Due to the difference in the lattice constants of about 4.1%, extra Si lattice planes were observed at the interface. No threading dislocations were introduced into the GaAs.Keywords
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