Growth of Si/GaAs superlattices by molecular beam epitaxy
- 10 February 1992
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (6) , 721-723
- https://doi.org/10.1063/1.107437
Abstract
The growth and characterization of a ten period silicon/GaAs superlattice by molecular beam epitaxy is described. Reflection high energy electron diffraction of the surface reconstruction during growth of the GaAs layers showed the (4×2)→(3×2) →(3×1)→(2×4) sequence reported previously for GaAs grown on pseudomorphic silicon, although the intermediate stages were much more persistent than previously reported. X-ray diffraction revealed satellite peaks clearly visible out to the fourth order, indicating a high degree of structural perfection. Comparison of the experimental diffraction profile and that obtained using a dynamical diffraction simulation yielded average layer thicknesses of 440 and 2.7 Å for the GaAs and silicon layers, respectively. Excellent agreement between the experimental and the simulated profiles was observed.Keywords
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