Low phase noise heterojunction bipolar transistor oscillator
- 2 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (16) , 1246-1248
- https://doi.org/10.1049/el:19900803
Abstract
A low phase noise, heterojunction bipolar transistor (HBT) oscillator has been designed and fabricated for operation at X-band. The common emitter oscillator employs a high-Q dielectric resonator as the parallel feedback element between the base and collector terminals. Series capacitive feedback is used in the emitter to enhance the oscillator's negative output impedance. Single-sideband FM noise levels of −76dBc/Hz and −102dBc/Hz have been achieved at 1 kHz and 10kHz frequency offsets, respectively, for an 11.06GHz carrier frequency. This is one of the lowest phase noise levels ever reported for an X-band solid-state transistor oscillator.Keywords
This publication has 5 references indexed in Scilit:
- Dielectric Resonator Oscillators Using GaAs/(Ga,A1)As Heterojunction Bipolar TransistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Parallel Feedback FETDRO Design Using 3-Port S-ParametersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A 0.5 µm Silicon Bipolar Transistor for Low Phase Noise Oscillator Applications Up to 20 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Dielectric Resonator Oscillators at 4, 6, and 11 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- The GaAs FET Oscillator- Its Signal and Noise PerformancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986