New emission lines in highly carbon ion-implanted GaAs
- 1 March 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 7-8, 433-437
- https://doi.org/10.1016/0168-583x(85)90594-4
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAsJournal of Electronic Materials, 1982
- Photoluminescence of carbon-implanted GaAsApplied Physics Letters, 1981
- Electron-Irradiation Effect on Emission Band Associated with Carbon Acceptors in n-GaAsJapanese Journal of Applied Physics, 1981
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974