Performance comparison of gain-coupled and index-coupled DFB semiconductor lasers
- 1 January 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 30 (9) , 2051-2063
- https://doi.org/10.1109/3.309864
Abstract
No abstract availableThis publication has 39 references indexed in Scilit:
- Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear dampingIEEE Photonics Technology Letters, 1991
- Spectral linewidth reduction by low spatial hole burning in 1.5 μm multi-quantum-well λ/4-shifted DFB lasersElectronics Letters, 1990
- Intrinsic modulation bandwidth in ultra-high-speed 1.3 and 1.55 μm GaInAsP DFB lasersElectronics Letters, 1989
- Ultrahigh-speed 1.55 µm λ/4-shifted DFB PIQ-BH lasers with bandwidth of 17 GHzElectronics Letters, 1989
- Transient chirping in distributed-feedback (DFB) lasers: effect of spatial hole-burning along the laser axisIEEE Journal of Quantum Electronics, 1988
- Frequency response of 1.3µm InGaAsP high speed semiconductor lasersIEEE Journal of Quantum Electronics, 1987
- Regimes of feedback effects in 1.5-µm distributed feedback lasersJournal of Lightwave Technology, 1986
- High-speed modulation of semiconductor lasersJournal of Lightwave Technology, 1985
- Coherence collapse in single-mode semiconductor lasers due to optical feedbackIEEE Journal of Quantum Electronics, 1985
- Spectral characteristics of semiconductor lasers with optical feedbackIEEE Journal of Quantum Electronics, 1982