Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 3 (8) , 688-693
- https://doi.org/10.1109/68.84454
Abstract
The authors demonstrate theoretically and experimentally that the relative intensity noise (RIN) of laser diodes can be dramatically reduced by decreasing nonlinear damping in the laser. Four types of InGaAs/InP multiple quantum well (MQW) lasers with different well widths, barrier widths, and numbers of wells were fabricated. By comparing these four types of devices, it is shown that MQW lasers with wider wells, narrower barriers, and larger numbers of wells have smaller nonlinear damping and lower RIN.<>Keywords
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