Inclined epitaxy of (411) beta silicon carbide on (511) silicon by chemical vapor deposition
- 8 June 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23) , 1684-1685
- https://doi.org/10.1063/1.97767
Abstract
Epitaxial growth of β-SiC on Si(511) substrates has been carried out. Single-crystalline β-SiC films without warpage and cracking are grown by chemical vapor deposition. The epitaxial orientation of the film is determined using x-ray precession camera. The orientation is inclined as SiC(411)//Si(511) coincident with the [011̄] axis, which should be compared with the parallel epitaxial growth on Si(100) or Si(111).Keywords
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