The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wells
- 2 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 189-193
- https://doi.org/10.1016/0022-0248(93)90602-s
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Influence of growth parameters on the interface abruptness in CBE-grown InGaAs/InP QWs and SLsJournal of Crystal Growth, 1992
- Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structuresJournal of Electronic Materials, 1992
- Growth and analysis of quantum well structuresJournal of Crystal Growth, 1991
- CBE growth of InGaAs for optoelectronic applicationsJournal of Crystal Growth, 1991
- Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor-phase epitaxy with 0≤x≤1Journal of Applied Physics, 1990
- High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxyJournal of Applied Physics, 1987
- Man-made quantum wells: A new perspective on the finite square-well problemAmerican Journal of Physics, 1984