Influence of growth parameters on the interface abruptness in CBE-grown InGaAs/InP QWs and SLs
- 1 May 1992
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 120 (1-4) , 333-337
- https://doi.org/10.1016/0022-0248(92)90413-d
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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