Finite interface effects for thin GaInAs/InP quantum wells grown by LP-MOVPE with a growth interruption sequence
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4) , 543-548
- https://doi.org/10.1016/0022-0248(91)90518-a
Abstract
No abstract availableKeywords
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