Reduction of gate resistance in tenth-micron gate MODFETs for microwave applications

This publication has 5 references indexed in Scilit:

• 0.1-µm Gate-length pseudomorphic HEMT's
  IEEE Electron Device Letters, 1987
• Very short gate-length GaAs MESFET's
  IEEE Electron Device Letters, 1985
• Electron-beam fabrication of GaAs low-noise MESFET's using a new trilayer resist technique
  IEEE Transactions on Electron Devices, 1985
• Quarter micron low noise GaAs FET's
  IEEE Electron Device Letters, 1982
• Microwave Properties of Schottky-barrier Field-effect Transistors
  IBM Journal of Research and Development, 1970