Waveguide photodetectors for the near-infrared in polycrystalline Germanium on silicon
- 24 April 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 18 (9) , 1094-1096
- https://doi.org/10.1109/lpt.2006.873964
Abstract
We demonstrate novel near-infrared waveguide photodetectors in polycrystalline germanium deposited on silicon-on-insulator at low temperatures. We present the design, fabrication, and characterization of two photodiodes and their comparison. Without optimization, at 1.55 /spl mu/m, we measured wall-plug and effective responsivities as high as 30 mA/W and in excess of 150 mA/W, respectively.Keywords
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