Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes
- 1 April 2002
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 31 (4) , 313-315
- https://doi.org/10.1007/s11664-002-0149-9
Abstract
No abstract availableKeywords
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