Effects of growth direction on lasing performance in GaAsAlxGa1−xAs quantum wells
- 31 December 1992
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 11 (4) , 387-392
- https://doi.org/10.1016/0749-6036(92)90194-a
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Theory of reduced threshold current density in GaAs/AlGaAs quantum well lasersSuperlattices and Microstructures, 1990
- Initial Growth Mechanism of GaAs on Si(110)Japanese Journal of Applied Physics, 1990
- Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasersJournal of Applied Physics, 1988
- Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasersApplied Physics Letters, 1988
- AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxyApplied Physics Letters, 1986
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- Interface morphology studies of (110) and (111) Ge-GaAs grown by molecular beam epitaxyApplied Physics Letters, 1982
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende-on-diamond systemsApplied Physics Letters, 1980
- Polar heterojunction interfacesPhysical Review B, 1978