Effects of mesa area and orientation on defects in strained InxGa1−xAs films grown by LPOMCVD
- 1 July 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (7) , 709-717
- https://doi.org/10.1007/bf02665956
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Patterned substrate epitaxy surface shapesJournal of Crystal Growth, 1991
- On the generation of misfit dislocationsJournal of Electronic Materials, 1990
- Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substratesJournal of Electronic Materials, 1990
- Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth areaJournal of Applied Physics, 1989
- Elimination of interface defects in mismatched epilayers by a reduction in growth areaApplied Physics Letters, 1988
- Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Evidence for pseudomorphic growth of iron on copperPhilosophical Magazine, 1967
- Selective Epitaxial Deposition of SiliconNature, 1962