Refraction and diffraction of photoelectrons at the Ge(001) surface
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 7915-7918
- https://doi.org/10.1103/physrevb.31.7915
Abstract
High-resolution photoemission spectra for the Ge 3d core levels were measured as a function of the polar emission angle from the Ge(001) surface for k along either the Ge[010] or the Ge[110] azimuth. The spectra were deconvolved to yield the separate contributions from the surface atomic layer and the bulk. Both sets of data show a general increasing trend for the surface contribution relative to the bulk contribution for increasing polar emission angle; superimposed on the increasing trend are small aperiodic oscillatory variations due to diffraction. The data were analyzed by ignoring diffraction. Refraction was found to be important; from a theoretical fit to the data, we obtained a value of 15 eV for the crystal inner potential relative to the vacuum level and a value of 7.2 Å for the electron escape depth at an electron kinetic energy of 37 eV.
Keywords
This publication has 10 references indexed in Scilit:
- Angle-resolved photoemission studies of Ge(001)-(2×1)Physical Review B, 1984
- Studies of the Ag-Ge(100) interfacePhysical Review B, 1984
- Surface core-level shifts for Ge(100)−(2 × 1)Solid State Communications, 1983
- Photoemission from surface-atom core levels, surface densities of states, and metal-atom clusters: A unified picturePhysical Review B, 1983
- Electron escape depths in germaniumSurface Science, 1981
- Geometry-DependentSurface Core-Level Excitations for Si(111) and Si(100) SurfacesPhysical Review Letters, 1980
- Nonlinear Partial Difference Equations for the Two-Dimensional Ising ModelPhysical Review Letters, 1980
- Selective Structural Sensitivity and Simplified Computations of Angle-Resolved Ultraviolet Photoemission SpectroscopyPhysical Review Letters, 1979
- On the structure of reconstructed Si(001)2×1 and Ge(001)2×1 surfacesJournal of Physics C: Solid State Physics, 1979
- Normal Photoelectron Diffraction of the SeLevel in Se Overlayers on Ni(100)Physical Review Letters, 1978