Study of the effects of a stepped doping profile in short-channel MOSFETs
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (9) , 1425-1431
- https://doi.org/10.1109/16.622597
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
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