New features of C-type defects on the Si(100) surface observed by scanning tunnelling microscopy
- 20 December 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 369 (1-3) , L131-L135
- https://doi.org/10.1016/s0039-6028(96)01129-6
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Scanning Tunneling Microscopy study of Oxide Nucleation and Oxidation-Induced Roughening at Elevated Temperatures on the Si(001)-(2 × 1) SurfacePhysical Review Letters, 1994
- Si(100)-(2×1) surface defects and dissociative and nondissociative adsorption ofO studied with scanning tunneling microscopyPhysical Review B, 1993
- Scanning tunnelling microscopy of the interaction of hydrogen with silicon surfacesAdvances in Physics, 1993
- Direct observation of an increase in buckled dimers on Si(001) at low temperaturePhysical Review Letters, 1992
- Scanning tunneling microscopy of Si(001)Physical Review B, 1986
- Si(001) Dimer Structure Observed with Scanning Tunneling MicroscopyPhysical Review Letters, 1985
- Atomic structure of Si{001}2×1Physical Review B, 1983
- (2 × 1) reconstructed Si(001) surface: Self-consistent calculations of dimer modelsPhysical Review B, 1980
- Diffraction of He at the reconstructed Si(100) surfacePhysical Review B, 1980
- Atomic and Electronic Structures of Reconstructed Si(100) SurfacesPhysical Review Letters, 1979