Anomalous electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P
- 15 September 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (6) , 4130-4135
- https://doi.org/10.1063/1.354437
Abstract
The electroreflectance spectrum of spontaneously ordered Ga0.5In0.5P contains two extra features at energies near 2.2 and 2.35 eV. The energies and intensities of these transitions are shown to be dependent on growth temperature and substrate misorientation. The possible origins of the two transitions are explored. The analysis shows that the transition at about 2.35 eV exhibits shifts consistent with those expected for Ga0.5In0.5P with ordered {111} planes. The second transition is shown to be unexpected and is not conclusively assigned. However, a possible assignment is identified, implying that a complete understanding of spontaneously ordered Ga0.5In0.5P may require simultaneous consideration of two different types of order.This publication has 30 references indexed in Scilit:
- Effect of growth rate on the band gap of Ga0.5In0.5PApplied Physics Letters, 1990
- Electroreflectance of ordered Ga0.5In0.5P AlloysJournal of Crystal Growth, 1989
- Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVDJournal of Crystal Growth, 1988
- Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1988
- Electroreflectance and photoreflectance of GaInPSolar Cells, 1988
- Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Ordered structure in OMVPE-grown Ga0.5In0.5PJournal of Crystal Growth, 1988
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987