On the investigation of laser-induced carriers in silicon in the picosecond time range
- 1 November 1983
- journal article
- research article
- Published by Springer Nature in Optical and Quantum Electronics
- Vol. 15 (6) , 477-485
- https://doi.org/10.1007/bf00620016
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Spatially inhomogeneous carrier concentration dependence of the reflectivity of semiconductorsOptical and Quantum Electronics, 1982
- Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulsesApplied Physics Letters, 1982
- The temperature dependence of the Auger recombination coefficient of undoped siliconJournal of Physics C: Solid State Physics, 1979
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974
- Optical Constants of Silicon in the Region 1 to 10 evPhysical Review B, 1960