Interface effects on MgZn3P2 Schottky diodes
- 29 February 1988
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 31 (2) , 257-260
- https://doi.org/10.1016/0038-1101(88)90138-4
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- On the current transport mechanism in a metal—insulator—semiconductor (MIS) diodeSolid-State Electronics, 1986
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983
- Mg diffused zinc phosphide n/p junctionsJournal of Applied Physics, 1982
- A pinhole model for metal-insulator-semiconductor solar cellsSolid-State Electronics, 1981
- On the pinhole model for MIS diodesSolid-State Electronics, 1981
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- A minority carrier MIS solar cellSolid-State Electronics, 1977
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956